JPH0539637Y2 - - Google Patents
Info
- Publication number
- JPH0539637Y2 JPH0539637Y2 JP7789086U JP7789086U JPH0539637Y2 JP H0539637 Y2 JPH0539637 Y2 JP H0539637Y2 JP 7789086 U JP7789086 U JP 7789086U JP 7789086 U JP7789086 U JP 7789086U JP H0539637 Y2 JPH0539637 Y2 JP H0539637Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating film
- conductivity type
- schottky barrier
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 5
- 230000007547 defect Effects 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7789086U JPH0539637Y2 (en]) | 1986-05-23 | 1986-05-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7789086U JPH0539637Y2 (en]) | 1986-05-23 | 1986-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190360U JPS62190360U (en]) | 1987-12-03 |
| JPH0539637Y2 true JPH0539637Y2 (en]) | 1993-10-07 |
Family
ID=30926323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7789086U Expired - Lifetime JPH0539637Y2 (en]) | 1986-05-23 | 1986-05-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539637Y2 (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4703236B2 (ja) * | 2005-03-31 | 2011-06-15 | 三洋電機株式会社 | 発光装置及びその製造方法 |
| US8310028B2 (en) * | 2008-01-09 | 2012-11-13 | Rohm Co., Ltd. | Semiconductor device with crystal defect and manufacturing method thereof |
-
1986
- 1986-05-23 JP JP7789086U patent/JPH0539637Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62190360U (en]) | 1987-12-03 |
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